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APTGT50A60T1G Phase leg Trench + Field Stop IGBT(R) Power Module 5 Q1 7 8 Q2 CR2 9 10 1 2 12 3 4 NTC 6 11 VCES = 600V IC = 50A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant CR1 Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C TJ = 150C Max ratings 600 80 50 100 20 176 100A @ 550V Unit V August, 2007 1-5 APTGT50A60T1G - Rev 0 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT50A60T1G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 50A Tj = 150C VGE = VCE , IC = 600A VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 600 Unit A V V nA 5.0 Dynamic Characteristics Symbol Characteristic Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 50A RG = 8.2 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 50A RG = 8.2 Tj = 25C VGE = 15V Tj = 150C VBus = 300V IC = 50A Tj = 25C RG = 8.2 Tj = 150C Min Typ 3150 200 95 110 45 200 40 120 50 250 60 0.3 0.43 1.35 1.75 Max Unit pF ns ns mJ mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 600 Typ Max 250 500 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=600V IF = 50A VGE = 0V 50 1.6 1.5 100 150 2.6 5.4 0.6 1.2 2 V August, 2007 2-5 APTGT50A60T1G - Rev 0 ns C mJ IF = 50A VR = 300V di/dt =1800A/s www.microsemi.com APTGT50A60T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.85 1.42 175 125 100 4.7 80 Unit C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz V C N.m g To heatsink M4 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25 Min Typ 50 3952 Max Unit k K SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT50A60T1G - Rev 0 August, 2007 APTGT50A60T1G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 100 TJ = 150C VGE=19V 100 TJ=25C 80 IC (A) TJ=125C 80 IC (A) TJ=150C VGE=13V 60 40 20 0 0 0.5 1 TJ=25C 60 VGE=15V 40 20 0 VGE=9V 1.5 VCE (V) 2 2.5 3 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 100 80 60 40 20 0 5 Transfert Characteristics 3.5 TJ=25C Energy losses vs Collector Current 3 2.5 E (mJ) VCE = 300V VGE = 15V RG = 8.2 TJ = 150C Eoff IC (A) 2 1.5 1 Er TJ=125C TJ=150C TJ=25C 0.5 0 11 12 0 20 40 IC (A) 60 80 Eon 6 7 8 9 10 100 VGE (V) Switching Energy Losses vs Gate Resistance 3 2.5 2 E (mJ) 1.5 1 Er Reverse Bias Safe Operating Area 125 VCE = 300V VGE =15V IC = 50A TJ = 150C Eoff Eon 100 IC (A) 75 50 25 0 VGE=15V TJ=150C RG=8.2 0.5 0 5 15 Eon 25 35 45 55 Gate Resistance (ohms) 65 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.8 0.6 0.4 0.2 0.9 IGBT 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.05 0 0.00001 Rectangular Pulse Duration in Seconds www.microsemi.com 4-5 APTGT50A60T1G - Rev 0 August, 2007 0.7 APTGT50A60T1G Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 60 40 20 0 0 20 40 IC (A) 60 80 Hard switching ZVS ZCS VCE=300V D=50% RG=8.2 TJ=150C Forward Characteristic of diode 100 80 60 40 20 TJ=25C TJ=125C TJ=150C IF (A) Tc=85C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.6 Thermal Impedance (C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Diode 0.05 0 0.00001 Rectangular Pulse Duration in Seconds Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT50A60T1G - Rev 0 August, 2007 |
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